PART |
Description |
Maker |
SFG08E200F SFG10S200F SFG10S600F SFG10S400F |
Voltage 200V ~ 600V 8.0 Amp Super Fast Recovery Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
SM10200C |
Voltage 200V 10.0 Amp Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
SBL20U200 |
Voltage 200V 20.0 Amp Low VF Trench Barrier Schottky Rectifier
|
SeCoS Halbleitertechnol...
|
SBL20U200F |
Voltage 200V 20.0 Amp Low VF Trench Barrier Schottky Rectifier
|
SeCoS Halbleitertechnol...
|
S2GVB80-C S2GVB40-C S2GVB60-C |
Voltage 200V ~800V 2 Amp Glass Passivited Bridge Rectifers
|
SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
|
SCD0803 SCD0803-15 |
VOLTAGE 200V ~800V 0.8 AMP Glass Passivated Ultra Fast Recovery Rectifier
|
SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
|
IRF610B IRF610BFP001 |
200V N-Channel B-FET / Substitute of IRF610 & IRF610A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFP250 IRFP250B IRFP250BFP001 |
200V N-Channel B-FET / Substitute of IRFP250 & IRFP250A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQD4N20TM |
200V N-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|
ES1DFL |
1A, 200V - 600V Surface Mount Super Fast Rectifiers
|
Taiwan Semiconductor Co...
|
BYG20DHR3G BYG20G |
1.5A, 200V - 600V High Efficient Surface Mount Rectifiers
|
Taiwan Semiconductor Co...
|
EABS1D EABS1G EABS1J |
1A, 200V - 600V Miniature Ultrafast Glass Passivated Bridge Rectifiers
|
Taiwan Semiconductor Co...
|